Vishay 600 V 30 A Diode Switching 3-Pin TO-247
- RS庫存編號:
- 919-4397
- 製造零件編號:
- VS-HFA30PA60C-N3
- 製造商:
- Vishay
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- RS庫存編號:
- 919-4397
- 製造零件編號:
- VS-HFA30PA60C-N3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 600V | |
| Series | VSX | |
| Diode Configuration | Common Cathode | |
| Rectifier Type | Switching | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 2V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 150A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 10μA | |
| Peak Reverse Recovery Time trr | 60ns | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 600V | ||
Series VSX | ||
Diode Configuration Common Cathode | ||
Rectifier Type Switching | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 2V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 150A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 10μA | ||
Peak Reverse Recovery Time trr 60ns | ||
Maximum Operating Temperature 150°C | ||
Length 15.87mm | ||
Height 20.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Features
Ultrafast recovery time
Ultrasoft recovery
Very low IRRM
Very low Qrr
Reduced radio frequency interference (RFI) and electromagnetic interference (EMI)
Reduced power loss in diode and switching transistor
Reduced snubbing
Diodes and Rectifiers, Vishay Semiconductor
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