Vishay 600 V 25 A Diode Switching 2-Pin TO-247
- RS庫存編號:
- 145-1577
- 製造零件編號:
- VS-HFA25PB60-N3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 25 件)*
TWD3,085.00
(不含稅)
TWD3,239.25
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,550 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 25 | TWD123.40 | TWD3,085.00 |
| 50 - 75 | TWD120.70 | TWD3,017.50 |
| 100 + | TWD118.00 | TWD2,950.00 |
* 參考價格
- RS庫存編號:
- 145-1577
- 製造零件編號:
- VS-HFA25PB60-N3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 25A | |
| Peak Reverse Repetitive Voltage Vrrm | 600V | |
| Diode Configuration | Single | |
| Series | VSX | |
| Rectifier Type | Switching | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 225A | |
| Peak Reverse Current Ir | 20μA | |
| Maximum Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Peak Reverse Recovery Time trr | 75ns | |
| Height | 20.7mm | |
| Standards/Approvals | RoHS | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 25A | ||
Peak Reverse Repetitive Voltage Vrrm 600V | ||
Diode Configuration Single | ||
Series VSX | ||
Rectifier Type Switching | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 225A | ||
Peak Reverse Current Ir 20μA | ||
Maximum Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Peak Reverse Recovery Time trr 75ns | ||
Height 20.7mm | ||
Standards/Approvals RoHS | ||
Length 15.9mm | ||
Automotive Standard No | ||
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast Planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Features
Ultrafast recovery time
Ultrasoft recovery
Very low IRRM
Very low Qrr
Reduced radio frequency interference (RFI) and electromagnetic interference (EMI)
Reduced power loss in diode and switching transistor
Reduced snubbing
Diodes and Rectifiers, Vishay Semiconductor
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