Vishay 45 V 30 A Schottky Barrier Rectifier Schottky 3-Pin D2PAK
- RS庫存編號:
- 768-9269
- 製造零件編號:
- VBT3045BP-E3/4W
- 製造商:
- Vishay
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小計(1 袋,共 2 件)*
TWD49.00
(不含稅)
TWD51.44
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每袋* |
|---|---|---|
| 2 - 12 | TWD24.50 | TWD49.00 |
| 14 - 24 | TWD23.50 | TWD47.00 |
| 26 + | TWD22.50 | TWD45.00 |
* 參考價格
- RS庫存編號:
- 768-9269
- 製造零件編號:
- VBT3045BP-E3/4W
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Schottky Barrier Rectifier | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 45V | |
| Diode Configuration | Single | |
| Series | TMBS | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Maximum Forward Voltage Vf | 700mV | |
| Peak Reverse Current Ir | 2000μA | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61215 ed.2, RoHS, UL 94 V-0 | |
| Length | 10.45mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Schottky Barrier Rectifier | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 45V | ||
Diode Configuration Single | ||
Series TMBS | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Maximum Forward Voltage Vf 700mV | ||
Peak Reverse Current Ir 2000μA | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61215 ed.2, RoHS, UL 94 V-0 | ||
Length 10.45mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
TMBS - Trench MOS Barrier Schottky Rectifiers, 30A to 80A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Features
Schottky Rectifiers, Vishay Semiconductor
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