Vishay 45 V 20 A Diode Schottky 3-Pin D2PAK VBT2045BP-E3/4W
- RS庫存編號:
- 145-1817
- 製造零件編號:
- VBT2045BP-E3/4W
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD865.00
(不含稅)
TWD908.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD17.30 | TWD865.00 |
| 100 - 150 | TWD16.90 | TWD845.00 |
| 200 + | TWD16.50 | TWD825.00 |
* 參考價格
- RS庫存編號:
- 145-1817
- 製造零件編號:
- VBT2045BP-E3/4W
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 45V | |
| Diode Configuration | Single | |
| Series | VBTX | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 660mV | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 160A | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 30mA | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.45mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 45V | ||
Diode Configuration Single | ||
Series VBTX | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 660mV | ||
Peak Non-Repetitive Forward Surge Current Ifsm 160A | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 30mA | ||
Maximum Operating Temperature 150°C | ||
Length 10.45mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Schottky Rectifiers, Vishay Semiconductor
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