Vishay 100 V 12 A Diode Schottky 3-Pin TO-277 V12P10-M3/86A
- RS庫存編號:
- 710-3929
- 製造零件編號:
- V12P10-M3/86A
- 製造商:
- Vishay
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TWD145.00
(不含稅)
TWD152.25
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 8,550 件從 2026年6月08日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 370 | TWD29.00 | TWD145.00 |
| 375 - 745 | TWD28.40 | TWD142.00 |
| 750 + | TWD27.80 | TWD139.00 |
* 參考價格
- RS庫存編號:
- 710-3929
- 製造零件編號:
- V12P10-M3/86A
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-277 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 100V | |
| Series | V12 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Peak Reverse Current Ir | 250μA | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 4.75mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-277 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 100V | ||
Series V12 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Peak Reverse Current Ir 250μA | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 4.75mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Schottky Rectifiers, Vishay Semiconductor
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