Vishay 100 V 8 A Diode Schottky 3-Pin TO-277 V8P10-M3/86A
- RS庫存編號:
- 710-3923
- Distrelec 貨號:
- 304-44-310
- 製造零件編號:
- V8P10-M3/86A
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD62.00
(不含稅)
TWD65.10
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,970 件從 2026年6月15日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 370 | TWD12.40 | TWD62.00 |
| 375 - 745 | TWD12.00 | TWD60.00 |
| 750 + | TWD11.80 | TWD59.00 |
* 參考價格
- RS庫存編號:
- 710-3923
- Distrelec 貨號:
- 304-44-310
- 製造零件編號:
- V8P10-M3/86A
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-277 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 100V | |
| Diode Configuration | Single | |
| Series | V8PX | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 70μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 150A | |
| Maximum Forward Voltage Vf | 680mV | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.35mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-277 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 100V | ||
Diode Configuration Single | ||
Series V8PX | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 70μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 150A | ||
Maximum Forward Voltage Vf 680mV | ||
Maximum Operating Temperature 150°C | ||
Length 4.35mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over Planar Schottky rectifiers. At operating voltages of 45V and above Planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Schottky Rectifiers, Vishay Semiconductor
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