Infineon 650 V 12 A Rectifier & Schottky Diode Rectifier Diode 2-Pin TO-220

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TWD128.00

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TWD134.40

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RS庫存編號:
273-2744
製造零件編號:
IDK12G65C5XTMA2
製造商:
Infineon
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品牌

Infineon

Mount Type

Through Hole

Product Type

Rectifier & Schottky Diode

Package Type

TO-220

Maximum Continuous Forward Current If

12A

Peak Reverse Repetitive Voltage Vrrm

650V

Diode Configuration

Single

Series

5th Generation thinQ!TM

Rectifier Type

Rectifier Diode

Pin Count

2

Minimum Operating Temperature

-55°C

Maximum Forward Voltage Vf

1.5V

Peak Reverse Current Ir

190μA

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon SiC Schottky Diode is a silicon carbide schottky barrier diode. The ThinQ Generation 5 represents Infineon leading edge technology for the SiC schottky barrier diode. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit.

RoHS compliant

Pb free lead plating

High surge current capability

Benchmark switching behaviour

Optimized for high temperature operation

Temperature independent switching behaviour

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