Infineon 650 V 10 A Diode 2-Pin D2PAK IDK10G65C5XTMA2
- RS庫存編號:
- 258-0964
- 製造零件編號:
- IDK10G65C5XTMA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD133.00
(不含稅)
TWD139.65
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 988 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD133.00 |
| 10 - 99 | TWD120.00 |
| 100 - 249 | TWD117.00 |
| 250 - 499 | TWD99.00 |
| 500 + | TWD95.00 |
* 參考價格
- RS庫存編號:
- 258-0964
- 製造零件編號:
- IDK10G65C5XTMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDK04G65C5 | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 180μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDK04G65C5 | ||
Pin Count 2 | ||
Peak Reverse Current Ir 180μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
相關連結
- Infineon 650 V 10 A Diode 2-Pin D2PAK
- Infineon 650 V 20 A Schottky Barrier Diode Schottky 10-Pin D2PAK
- Infineon 650 V 20 A Schottky Barrier Diode Schottky 10-Pin D2PAK IDDD20G65C6XTMA1
- Infineon 650 V 4 A Diode 2-Pin D2PAK
- Infineon 650 V 4 A Diode 2-Pin D2PAK IDK04G65C5XTMA2
- Infineon 650 V 6 A Rectifier & Schottky Diode 3-Pin D2PAK
- Infineon 650 V 6 A Rectifier & Schottky Diode 3-Pin D2PAK IDK06G65C5XTMA2
- STMicroelectronics 650 V 10 A Diode 3-Pin D2PAK