Infineon 650 V 4 A Diode 2-Pin D2PAK
- RS庫存編號:
- 258-0957
- 製造零件編號:
- IDK04G65C5XTMA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1000 件）*
TWD28,000.00
(不含稅)
TWD29,400.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月29日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD28.00 | TWD28,000.00 |
| 2000 + | TWD27.50 | TWD27,500.00 |
* 參考價格
- RS庫存編號:
- 258-0957
- 製造零件編號:
- IDK04G65C5XTMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | IDK04G65C5 | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 215A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.2V | |
| Peak Reverse Current Ir | 500μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series IDK04G65C5 | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 215A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.2V | ||
Peak Reverse Current Ir 500μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1, RoHS | ||
Automotive Standard No | ||
The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
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