onsemi 650 V 40 A Schottky Diode Schottky 3-Pin TO-220 FFSP4065BDN-F085
- RS庫存編號:
- 195-2622
- 製造零件編號:
- FFSP4065BDN-F085
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD1,094.00
(不含稅)
TWD1,148.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 555 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD218.80 | TWD1,094.00 |
| 15 - 20 | TWD213.20 | TWD1,066.00 |
| 25 + | TWD210.20 | TWD1,051.00 |
* 參考價格
- RS庫存編號:
- 195-2622
- 製造零件編號:
- FFSP4065BDN-F085
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | 2x Common Cathode Pair | |
| Series | FFSP | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 882A | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Reverse Current Ir | 160A | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 9.4mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Mount Type Through Hole | ||
Product Type Schottky Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration 2x Common Cathode Pair | ||
Series FFSP | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 882A | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Reverse Current Ir 160A | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 9.4mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 40A, 650V, D2, TO-220-3L Silicon Carbide Schottky Diode, 650 V, 40 A
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current,temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency,faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175°C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
These Devices are Pb−Free, Halogen Free/BFR FreeApplications
Automotive HEV−EV Onboard Chargers
Automotive HEV−EV DC−DC Converters
相關連結
- onsemi 650 V 40 A Schottky Diode Schottky 3-Pin TO-220
- onsemi 650 V 20 A Schottky Diode Schottky 3-Pin TO-220 FFSP2065BDN-F085
- onsemi 650 V 20 A Schottky Diode Schottky 3-Pin TO-220
- onsemi 650 V 9.1 A Schottky Diode Schottky 3-Pin DPAK FFSD0665B-F085
- onsemi 650 V 11.6 A Schottky Diode Schottky 3-Pin DPAK FFSD0865B-F085
- onsemi 650 V 73 A Schottky Diode Schottky 3-Pin D2PAK FFSB3065B-F085
- onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin D2PAK FFSB0865B-F085
- onsemi 650 V 8 A Schottky Diode Schottky 2-Pin D2PAK FFSB0665B-F085