onsemi 650 V 27 A Schottky Diode Schottky 3-Pin D2PAK
- RS庫存編號:
- 185-7990
- 製造零件編號:
- FFSB1065B-F085
- 製造商:
- onsemi
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- RS庫存編號:
- 185-7990
- 製造零件編號:
- FFSB1065B-F085
- 製造商:
- onsemi
規格
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 27A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | EliteSiC | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Reverse Current Ir | 160A | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 45A | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 4.58mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 27A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series EliteSiC | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Reverse Current Ir 160A | ||
Peak Non-Repetitive Forward Surge Current Ifsm 45A | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 4.58mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard AEC-Q101 | ||
不相容
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, D2PAK
Automotive Silicon Carbide (SiC) Schottky Diode, 650 V
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175 oC
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
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