STMicroelectronics 1200 V 10 A Diode Schottky 2-Pin DO-247 STPSC10H12WL
- RS庫存編號:
- 164-7021
- 製造零件編號:
- STPSC10H12WL
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 件）*
TWD204.00
(不含稅)
TWD214.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 129 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 7 | TWD204.00 |
| 8 + | TWD199.00 |
* 參考價格
- RS庫存編號:
- 164-7021
- 製造零件編號:
- STPSC10H12WL
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | DO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Reverse Current Ir | 400μA | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 420A | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.26mm | |
| Height | 21.46mm | |
| Diameter | 3.56mm | |
| Standards/Approvals | No | |
| Width | 5.31mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type DO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Reverse Current Ir 400μA | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 420A | ||
Maximum Operating Temperature 175°C | ||
Length 16.26mm | ||
Height 21.46mm | ||
Diameter 3.56mm | ||
Standards/Approvals No | ||
Width 5.31mm | ||
Automotive Standard No | ||
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating from -40 °C to 175 °C
Low VF
相關連結
- STMicroelectronics 1200 V 10 A Diode Schottky 2-Pin DO-247
- STMicroelectronics 1200 V 30 A Rectifier & Schottky Diode 2-Pin DO-247
- STMicroelectronics 1200 V 30 A Rectifier & Schottky Diode 2-Pin DO-247 STTH6012WL
- STMicroelectronics 1200 V 20 A Rectifier & Schottky Diode Rectifier Diode 2-Pin DO-247 LL
- STMicroelectronics 1200 V 30 A Rectifier & Schottky Diode Rectifier Diode 2-Pin DO-247 LL
- STMicroelectronics 1200 V 30 A Rectifier & Schottky Diode 2-Pin DO-247 LL
- STMicroelectronics 1200 V 30 A Rectifier & Schottky Diode Rectifier Diode 2-Pin DO-247 LL STPSC30G12WL
- STMicroelectronics 1200 V 30 A Rectifier & Schottky Diode Rectifier Diode 2-Pin DO-247 LL STPSC30G12WLY