STMicroelectronics 1200 V 10 A Diode Schottky 2-Pin DO-247 STPSC10H12WL
- RS庫存編號:
- 164-6968
- 製造零件編號:
- STPSC10H12WL
- 製造商:
- STMicroelectronics
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可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
TWD5,223.00
(不含稅)
TWD5,484.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 120 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD174.10 | TWD5,223.00 |
| 60 + | TWD168.90 | TWD5,067.00 |
* 參考價格
- RS庫存編號:
- 164-6968
- 製造零件編號:
- STPSC10H12WL
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | DO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 420A | |
| Peak Reverse Current Ir | 400μA | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.31mm | |
| Standards/Approvals | No | |
| Diameter | 3.56mm | |
| Height | 21.46mm | |
| Length | 16.26mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type DO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 420A | ||
Peak Reverse Current Ir 400μA | ||
Maximum Operating Temperature 175°C | ||
Width 5.31mm | ||
Standards/Approvals No | ||
Diameter 3.56mm | ||
Height 21.46mm | ||
Length 16.26mm | ||
Automotive Standard No | ||
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating from -40 °C to 175 °C
Low VF
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