onsemi 650 V 20 A Diode 3-Pin TO-247-3LD FFSH2065BDN
- RS庫存編號:
- 277-071
- 製造零件編號:
- FFSH2065BDN
- 製造商:
- onsemi
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TWD272.00
(不含稅)
TWD285.60
(含稅)
訂單超過 $1,300.00 免費送貨
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- 450 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD136.00 | TWD272.00 |
| 20 - 198 | TWD122.50 | TWD245.00 |
| 200 - 998 | TWD113.00 | TWD226.00 |
| 1000 - 1998 | TWD105.00 | TWD210.00 |
| 2000 + | TWD94.00 | TWD188.00 |
* 參考價格
- RS庫存編號:
- 277-071
- 製造零件編號:
- FFSH2065BDN
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-3LD | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | FFSH | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 650A | |
| Maximum Forward Voltage Vf | 2.4V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-3LD | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series FFSH | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 650A | ||
Maximum Forward Voltage Vf 2.4V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 160μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Schottky diode offer superior switching performance and higher reliability compared to traditional Silicon diodes. It features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance, making SiC the next generation of power semiconductors. The system benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and smaller, more cost-effective system designs. These advantages make SiC Schottky diodes ideal for high-performance power applications.
Max junction temperature 175°C
Avalanche rated 49 mJ
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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