ROHM 650 V 10 A Diode SiC Schottky 3-Pin TO-220ACGE SCS310AGC16
- RS庫存編號:
- 265-016
- 製造零件編號:
- SCS310AGC16
- 製造商:
- ROHM
可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
TWD305.00
(不含稅)
TWD320.24
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 98 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD152.50 | TWD305.00 |
| 20 - 198 | TWD137.50 | TWD275.00 |
| 200 - 998 | TWD127.00 | TWD254.00 |
| 1000 - 1998 | TWD117.50 | TWD235.00 |
| 2000 + | TWD105.50 | TWD211.00 |
* 參考價格
- RS庫存編號:
- 265-016
- 製造零件編號:
- SCS310AGC16
- 製造商:
- ROHM
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220ACGE | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | SCS310 | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 300A | |
| Peak Reverse Current Ir | 6μA | |
| Maximum Forward Voltage Vf | 1.71V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220ACGE | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series SCS310 | ||
Rectifier Type SiC Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 300A | ||
Peak Reverse Current Ir 6μA | ||
Maximum Forward Voltage Vf 1.71V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM Schottky Barrier Diode is designed to deliver exceptional efficiency and performance for demanding applications. Its superior recovery time and high-speed switching capabilities make it an ideal choice for power management and converter circuits. Constructed using silicon carbide, the diode boasts a robust surge current handling capacity and reduced temperature dependence, enhancing reliability in high-temperature environments.
Constructed with silicon carbide for superior thermal stability and enhanced durability
Offers high speed switching for improved system response times
Minimises recovery times to improve overall circuit performance
Provides versatile operational flexibility to meet diverse application needs
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