Nexperia 650 V 10 A Diode SiC Schottky 2-Pin TO-220 PSC1065KQ
- RS庫存編號:
- 219-345
- 製造零件編號:
- PSC1065KQ
- 製造商:
- Nexperia
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小計（1 組，共 1 件）*
TWD200.00
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TWD210.00
(含稅)
訂單超過 $1,300.00 免費送貨
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* 參考價格
- RS庫存編號:
- 219-345
- 製造零件編號:
- PSC1065KQ
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | PSC | |
| Diode Configuration | 2x Common Cathode Pair | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 440A | |
| Peak Reverse Current Ir | 120μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.6V | |
| Maximum Operating Temperature | 175°C | |
| Peak Reverse Recovery Time trr | 0ns | |
| Height | 1.37mm | |
| Standards/Approvals | IEC 60134, JEDEC, JEITA, IEC, RoHS | |
| Length | 29.14mm | |
| Width | 10.42 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series PSC | ||
Diode Configuration 2x Common Cathode Pair | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 440A | ||
Peak Reverse Current Ir 120μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.6V | ||
Maximum Operating Temperature 175°C | ||
Peak Reverse Recovery Time trr 0ns | ||
Height 1.37mm | ||
Standards/Approvals IEC 60134, JEDEC, JEITA, IEC, RoHS | ||
Length 29.14mm | ||
Width 10.42 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Nexperia Schottky diode is used for ultra-high performance, low loss and high efficiency power conversion applications. The product offers temperature independent capacitive turn-off, zero recovery switching behaviour combined with an outstanding figure-of-merit (QC x VF). The merged PiN Schottky diode improves the robustness expressed in a high IFSM.
High power density
Reduced system costs
System miniaturization
Reduced EMI
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