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MOSFETs
N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXYS IXFK26N120P
RS庫存編號:
920-0877
製造零件編號:
IXFK26N120P
製造商:
IXYS
查看所有MOSFETs
217 現貨庫存,可於6工作日發貨。
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單價(不含稅) 毎管:25 個
TWD1,000.70
(不含稅)
TWD1,050.74
(含稅)
單位
每單位
Per Tube*
25 - 100
TWD1,000.70
TWD25,017.50
125 +
TWD900.60
TWD22,515.00
* 參考價格
RS庫存編號:
920-0877
製造零件編號:
IXFK26N120P
製造商:
IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
Datasheet
ESD Control Selection Guide V1
相容
符合聲明
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
屬性
值
Channel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
1200 V
Series
HiperFET, Polar
Package Type
TO-264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
460 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Maximum Power Dissipation
960 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
19.96mm
Typical Gate Charge @ Vgs
225 nC @ 10 V
Number of Elements per Chip
1
Width
5.13mm
Height
26.16mm
Minimum Operating Temperature
-55 °C