Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247

RS庫存編號:: 919-4810
製造零件編號:: IRFP250NPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247

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可享批量折扣

小計（1 管，共 25 件）*

TWD1,475.00

(不含稅)

TWD1,548.75

訂單超過 $1,300.00 免費送貨

有庫存

125 件準備從其他地點送貨
加上 4,875 件從 2026年1月29日起發貨

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單位	每單位	每管*
25 - 25	TWD59.00	TWD1,475.00
50 - 75	TWD57.80	TWD1,445.00
100 +	TWD53.60	TWD1,340.00

* 參考價格

RS庫存編號:: 919-4810
製造零件編號:: IRFP250NPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	75mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	123nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	214W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Width	5.3 mm
	Length	15.9mm
	Height	20.3mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 75mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 123nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 214W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Width 5.3 mm
	Length 15.9mm
	Height 20.3mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250NPBF

This power MOSFET is engineered for high performance across various electronic applications. As an N-channel MOSFET, it efficiently enhances current flow when voltage is applied. It is notable for its capacity to manage high current levels while maintaining low on-resistance, which makes it suitable for power-intensive applications.

Features & Benefits

• Continuous drain current rating of 30A supports robust performance

• Power dissipation capacity of 214W accommodates heavy-duty applications

• Maximum drain-source voltage of 200V contributes to device reliability

• Low Rds(on) of 75 mΩ minimises energy loss during operation

• Enhancement mode improves control and efficiency in circuit applications

• Compatible with TO-247AC package for seamless integration into existing systems

Applications

• Power supplies for industrial automation

• Driving high-current loads in electronic circuits

• Converters and inverters in renewable energy systems

• Motor control requiring fast switching

How does this MOSFET handle high temperatures?

With a maximum operating temperature of +175°C, it functions effectively in high-thermal environments, ensuring consistent performance under stress.

What are the implications of the specified on-resistance?

A low Rds(on) of 75 mΩ results in reduced power losses, enhancing overall efficiency and decreasing heat generation during use.

Is this device suitable for pulsed applications?

Yes, it can handle pulsed drain currents up to 120A, making it appropriate for short-duration, high-current applications.

How does it manage gate voltage during operation?

The device accommodates a range of gate-to-source voltages from -20 V to +20 V, providing flexibility in various control circuits.

What is the significance of the avalanche ratings?

The single pulse avalanche energy rating of 315 mJ indicates its capability to endure brief energy surges, safeguarding it under fault conditions.