Infineon HEXFET Type N-Channel MOSFET, 62 A, 30 V Enhancement, 3-Pin TO-220

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
RS庫存編號:
913-4036
製造零件編號:
IRLB8721PBF
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

62A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65W

Typical Gate Charge Qg @ Vgs

7.6nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.83 mm

Length

10.67mm

Standards/Approvals

No

Height

9.02mm

Automotive Standard

No

COO (Country of Origin):
MX

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 62A Maximum Continuous Drain Current - IRLB8721PBF


This MOSFET is a high-performance switching device tailored for various applications in electronics and automation. With a robust TO-220AB package, it features a continuous drain current capacity of 62A and can handle a maximum drain-source voltage of 30V. The device operates efficiently across a wide temperature range from -55°C to +175°C, making it suitable for demanding environments.

Features & Benefits


• Supports high frequency synchronous buck converters

• Engineered for high current use efficiently

• Fully characterised for avalanche voltage and current

• Minimal gate charge enhances switching performance

• Versatile mounting options simplify integration into designs

Applications


• Used in UPS and inverter systems

• Effective in high-frequency isolated DC-DC converters

• Suitable for synchronous rectification in industrial solutions

• Key component in computer processor power supplies

What is the significance of the device's low Rds(on)?


The low Rds(on) significantly lowers conduction losses, improving overall efficiency in power conversion applications, which is crucial for maintaining performance in high current operations.

How does the maximum gate threshold voltage affect device performance?


The gate threshold voltage range of 1.35V to 2.35V ensures the device can be reliably controlled in various applications, providing flexibility in integration with different drive circuits.

What considerations should be made for thermal management in applications?


Given the maximum power dissipation of 65W, appropriate thermal management strategies must be implemented, such as using a suitable heatsink, to prevent overheating and ensure reliable operation.

Can this MOSFET be used in automotive applications?


Yes, it is designed to operate effectively in high-temperature environments, making it suitable for automotive applications where thermal variability is a concern.

相關連結