Infineon HEXFET Type N-Channel MOSFET, 62 A, 30 V Enhancement, 3-Pin TO-220 IRLB8721PBF

RS庫存編號:: 725-9322
Distrelec 貨號:: 304-45-324
製造零件編號:: IRLB8721PBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 62 A, 30 V Enhancement, 3-Pin TO-220 IRLB8721PBF

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小計（1 包，共 5 件）*

TWD164.00

(不含稅)

TWD172.20

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

115 件準備從其他地點送貨
最終 35 件從 2026年1月28日起發貨

單位	每單位	每包*
5 - 10	TWD32.80	TWD164.00
15 +	TWD32.00	TWD160.00

* 參考價格

RS庫存編號:: 725-9322
Distrelec 貨號:: 304-45-324
製造零件編號:: IRLB8721PBF
製造商:: Infineon

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	62A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	7.6nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	65W
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Width	4.83 mm
	Standards/Approvals	No
	Height	9.02mm
	Length	10.67mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 62A
	Maximum Drain Source Voltage Vds 30V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 7.6nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 65W
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Width 4.83 mm
	Standards/Approvals No
	Height 9.02mm
	Length 10.67mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 62A Maximum Continuous Drain Current - IRLB8721PBF

This MOSFET is a high-performance switching device tailored for various applications in electronics and automation. With a robust TO-220AB package, it features a continuous drain current capacity of 62A and can handle a maximum drain-source voltage of 30V. The device operates efficiently across a wide temperature range from -55°C to +175°C, making it suitable for demanding environments.

Features & Benefits

• Supports high frequency synchronous buck converters

• Engineered for high current use efficiently

• Fully characterised for avalanche voltage and current

• Minimal gate charge enhances switching performance

• Versatile mounting options simplify integration into designs

Applications

• Used in UPS and inverter systems

• Effective in high-frequency isolated DC-DC converters

• Suitable for synchronous rectification in industrial solutions

• Key component in computer processor power supplies

What is the significance of the device's low Rds(on)?

The low Rds(on) significantly lowers conduction losses, improving overall efficiency in power conversion applications, which is crucial for maintaining performance in high current operations.

How does the maximum gate threshold voltage affect device performance?

The gate threshold voltage range of 1.35V to 2.35V ensures the device can be reliably controlled in various applications, providing flexibility in integration with different drive circuits.

What considerations should be made for thermal management in applications?

Given the maximum power dissipation of 65W, appropriate thermal management strategies must be implemented, such as using a suitable heatsink, to prevent overheating and ensure reliable operation.

Can this MOSFET be used in automotive applications?

Yes, it is designed to operate effectively in high-temperature environments, making it suitable for automotive applications where thermal variability is a concern.