Infineon OptiMOS 3 Type N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-263

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 卷,共 1000 件)*

TWD49,000.00

(不含稅)

TWD51,450.00

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 1,000 件從 2026年1月05日 起裝運發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
1000 - 4000TWD49.00TWD49,000.00
5000 +TWD48.00TWD48,000.00

* 參考價格

RS庫存編號:
911-4868
製造零件編號:
IPB320N20N3GATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

32mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

22nC

Maximum Power Dissipation Pd

136W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

9.45 mm

Length

10.31mm

Standards/Approvals

No

Height

4.57mm

Automotive Standard

No

COO (Country of Origin):
DE

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

相關連結