STMicroelectronics STripFET F7 N-Channel MOSFET, 140 A, 60 V Enhancement, 8-Pin PowerFLAT
- RS庫存編號:
- 907-4766P
- 製造零件編號:
- STL140N6F7
- 製造商:
- STMicroelectronics
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可享批量折扣
查看批量定價選項小計 750 件 (以卷裝提供)*
TWD80,100.00
(不含稅)
TWD84,105.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,795 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 750 - 1495 | TWD106.80 |
| 1500 + | TWD105.40 |
* 參考價格
- RS庫存編號:
- 907-4766P
- 製造零件編號:
- STL140N6F7
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerFLAT | |
| Series | STripFET F7 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.95mm | |
| Width | 5.2mm | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerFLAT | ||
Series STripFET F7 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Operating Temperature 175°C | ||
Height 0.95mm | ||
Width 5.2mm | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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