STMicroelectronics STripFET F7 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220 STP130N6F7
- RS庫存編號:
- 906-4684
- 製造零件編號:
- STP130N6F7
- 製造商:
- STMicroelectronics
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TWD229.95
(含稅)
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- 加上 830 件從 2026年1月19日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD43.80 | TWD219.00 |
| 15 - 20 | TWD42.40 | TWD212.00 |
| 25 + | TWD41.60 | TWD208.00 |
* 參考價格
- RS庫存編號:
- 906-4684
- 製造零件編號:
- STP130N6F7
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | STripFET F7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 160W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.6nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.15mm | |
| Length | 10.4mm | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series STripFET F7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 160W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.6nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.15mm | ||
Length 10.4mm | ||
Width 4.6 mm | ||
Automotive Standard No | ||
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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