Infineon OptiMOS 5 Type N-Channel MOSFET, 180 A, 60 V Enhancement, 7-Pin TO-263 IPB010N06NATMA1
- RS庫存編號:
- 906-4353
- 製造零件編號:
- IPB010N06NATMA1
- 製造商:
- Infineon
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- RS庫存編號:
- 906-4353
- 製造零件編號:
- IPB010N06NATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 208nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.31mm | |
| Height | 9.45mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 208nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.31mm | ||
Height 9.45mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
豁免
Infineon OptiMOS 5 Series MOSFET, 60V Drain Source Voltage, 180A Continuous Drain Current - IPB010N06NATMA1
This MOSFET is a high-current N-channel enhancement device designed for power switching in surface-mounted applications. It operates across an extended temperature range and is suited to demanding electrical environments where low conduction losses and robust gate control are required.
Features and Benefits:
• 60V drain rating enabling medium-voltage switching capabilities
• 1.5mΩ Rds(on) reducing conduction losses for high-current paths
• 180A continuous drain current supporting heavy load demands
• 300W maximum power dissipation allowing sustained thermal loading
• 208nC typical gate charge enabling predictable switching behaviour
• 20V maximum gate-source voltage protecting gate drive limits
• 1.5mΩ Rds(on) reducing conduction losses for high-current paths
• 180A continuous drain current supporting heavy load demands
• 300W maximum power dissipation allowing sustained thermal loading
• 208nC typical gate charge enabling predictable switching behaviour
• 20V maximum gate-source voltage protecting gate drive limits
Applications
• Suitable for high-current DC-DC converters in power systems
• Ideal for server and telecoms power distribution modules
• Used with motor controllers requiring low on-resistance switches
• Can be used for battery management and power conditioning
• Appropriate for general purpose power stages in industrial electronics
• Ideal for server and telecoms power distribution modules
• Used with motor controllers requiring low on-resistance switches
• Can be used for battery management and power conditioning
• Appropriate for general purpose power stages in industrial electronics
What thermal range can the device withstand during operation?
It functions across -55°C to 175°C enabling use in both cold-start and high-heat environments.
How is it intended to be mounted on a board?
The component is supplied in a TO-263 package designed for surface-mount placement and soldering.
What gate drive considerations should be observed?
The gate must not exceed 20V Vgs and the typical gate charge of 208nC should be considered when sizing drivers to meet switching speed and loss targets.
Which forward voltage is relevant during body-diode conduction?
The forward conduction voltage is approximately 1.2V and should be included in loss calculations for reverse-current events.
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