Infineon CoolMOS C6 Type N-Channel Power Transistor, 23.8 A, 600 V Enhancement, 3-Pin TO-247 IPW60R160C6FKSA1
- RS庫存編號:
- 897-7172
- 製造零件編號:
- IPW60R160C6FKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 4 件）*
TWD517.20
(不含稅)
TWD543.04
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 4 - 4 | TWD129.30 | TWD517.20 |
| 8 - 12 | TWD126.50 | TWD506.00 |
| 16 + | TWD118.00 | TWD472.00 |
* 參考價格
- RS庫存編號:
- 897-7172
- 製造零件編號:
- IPW60R160C6FKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS C6 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 176W | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Standards/Approvals | JEDEC J-STD20, JESD22, Pb-Free Plating | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS C6 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 176W | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Height 21.1mm | ||
Standards/Approvals JEDEC J-STD20, JESD22, Pb-Free Plating | ||
Automotive Standard No | ||
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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