製造零件編號

Toshiba TK N-Channel MOSFET, 9.7 A, 600 V, 3-Pin DPAK TK10P60W,RVQ(S

RS庫存編號:: 896-2640
製造零件編號:: TK10P60W,RVQ(S
製造商:: Toshiba

Toshiba TK N-Channel MOSFET, 9.7 A, 600 V, 3-Pin DPAK TK10P60W,RVQ(S

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 5 件）*

TWD205.00

(不含稅)

TWD215.25

訂單超過 $1,300.00 免費送貨

庫存資訊目前無法查詢

單位	每單位	每包*
5 - 20	TWD41.00	TWD205.00
25 - 120	TWD40.20	TWD201.00
125 - 245	TWD39.00	TWD195.00
250 - 495	TWD38.00	TWD190.00
500 +	TWD37.00	TWD185.00

* 參考價格

RS庫存編號:: 896-2640
製造零件編號:: TK10P60W,RVQ(S
製造商:: Toshiba

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Toshiba
	Channel Type	N
	Maximum Continuous Drain Current	9.7 A
	Maximum Drain Source Voltage	600 V
	Series	TK
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	430 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.7V
	Maximum Power Dissipation	80 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Number of Elements per Chip	1
	Length	6.6mm
	Typical Gate Charge @ Vgs	20 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Width	7.18mm
	Transistor Material	Si
	Height	2.3mm

	選取全部
	品牌 Toshiba
	Channel Type N
	Maximum Continuous Drain Current 9.7 A
	Maximum Drain Source Voltage 600 V
	Series TK
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 430 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.7V
	Maximum Power Dissipation 80 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Number of Elements per Chip 1
	Length 6.6mm
	Typical Gate Charge @ Vgs 20 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Width 7.18mm
	Transistor Material Si
	Height 2.3mm

COO (Country of Origin):: CN

MOSFET Transistors, Toshiba

Toshiba TK N-Channel MOSFET, 9.7 A, 600 V, 3-Pin DPAK TK10P60W,RVQ(S

訂單超過 $1,300.00 免費送貨

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