Texas Instruments Single NexFET 1 N-Channel MOSFET, 259 A, 100 V Enhancement, 3-Pin TO-220 CSD19536KCS

品牌

Texas Instruments

Transistor Configuration

Single

Series

NexFET

Number of Elements per Chip

1

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

259 A

Maximum Drain Source Voltage (Vds)

100 V

Channel Mode

Enhancement

Pin Count

3

Package Type

TO-220

Automotive Standard

No

Forward Voltage (Vf)

-5 V

Height

16.51 mm

Length

10.67 mm

Maximum Drain Source Resistance (Rds)

3.2 mΩ

Maximum Gate Source Voltage (Vgs)

-20 V, +20 V

Maximum Operating Temperature

175 °C

Maximum Power Dissipation (Pd)

375 W

Minimum Operating Temperature

-55 °C

Mount Type

Through Hole, Through Hole

Standards/Approvals

No

Typical Gate Charge (Qg) @ Vgs

118 nC

Width

4.7 mm