DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 1.3 A, 30 V Enhancement, 6-Pin SC-88 DMN3190LDW-7
- RS庫存編號:
- 827-0480
- 製造零件編號:
- DMN3190LDW-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 50 件）*
TWD160.00
(不含稅)
TWD168.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 5,350 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 700 | TWD3.20 | TWD160.00 |
| 750 - 1450 | TWD3.20 | TWD160.00 |
| 1500 + | TWD3.10 | TWD155.00 |
* 參考價格
- RS庫存編號:
- 827-0480
- 製造零件編號:
- DMN3190LDW-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 335mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 400mW | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Standards/Approvals | J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 335mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 400mW | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Height 1mm | ||
Standards/Approvals J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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