Infineon SIPMOS Type P-Channel MOSFET, 1.17 A, 60 V Enhancement, 4-Pin SOT-223 BSP315PH6327XTSA1
- RS庫存編號:
- 826-9238
- Distrelec 貨號:
- 304-44-415
- 製造零件編號:
- BSP315PH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 50 件）*
TWD1,165.00
(不含稅)
TWD1,223.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 9,700 件從 2026年8月10日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 200 | TWD23.30 | TWD1,165.00 |
| 250 - 450 | TWD22.70 | TWD1,135.00 |
| 500 + | TWD21.20 | TWD1,060.00 |
* 參考價格
- RS庫存編號:
- 826-9238
- Distrelec 貨號:
- 304-44-415
- 製造零件編號:
- BSP315PH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.17A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Forward Voltage Vf | -0.97V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.17A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Forward Voltage Vf -0.97V | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP315PH6327XTSA1
This MOSFET is a P-channel enhancement-mode transistor designed for surface-mount power switching in automotive and industrial contexts. It offers moderate current-handling and voltage capability for load switching and reverse-polarity protection in compact assemblies, and is suitable for environments that demand extended temperature operation.
Features and Benefits:
• 60V drain-source rating for medium-voltage switching capability
• 1.17A continuous drain current for small-signal power delivery
• 800 mΩ maximum RDS(on) for reduced conduction losses
• 5.2 nC typical gate charge for efficient gate drive
• 1.8W power dissipation enabling sustained low-power operation
• AEC‑Q101 qualification for automotive-grade stress tolerance
• 1.17A continuous drain current for small-signal power delivery
• 800 mΩ maximum RDS(on) for reduced conduction losses
• 5.2 nC typical gate charge for efficient gate drive
• 1.8W power dissipation enabling sustained low-power operation
• AEC‑Q101 qualification for automotive-grade stress tolerance
Applications
• Suitable for battery-management load switching in vehicles
• Ideal for reverse-polarity protection in automotive electronics
• Used with low-power DC/DC converters for high-side switching
• Can be used for load disconnect in telematics modules
• Suitable for compact power-control boards requiring surface mount
• Ideal for reverse-polarity protection in automotive electronics
• Used with low-power DC/DC converters for high-side switching
• Can be used for load disconnect in telematics modules
• Suitable for compact power-control boards requiring surface mount
What temperature range can it operate within?
It is specified to function from -55 °C up to 150 °C to suit high-temperature environments.
Which package and mounting method does it use?
The device is supplied in a SOT-223 package and intended for surface mounting.
How many pins are available for circuit connections?
It provides four pins to accommodate source, drain, gate and mounting/contact arrangements.
What maximum gate voltage should be observed during use?
Gate-source voltage must not exceed 20V to avoid device stress.
相關連結
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 BSP317PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 BSP92PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 BSP171PH6327XTSA1