Infineon OptiMOS-T Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-263 IPB17N25S3100ATMA1
- RS庫存編號:
- 826-9002
- 製造零件編號:
- IPB17N25S3100ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD1,074.00
(不含稅)
TWD1,127.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 780 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 240 | TWD53.70 | TWD1,074.00 |
| 260 - 480 | TWD52.30 | TWD1,046.00 |
| 500 + | TWD48.90 | TWD978.00 |
* 參考價格
- RS庫存編號:
- 826-9002
- 製造零件編號:
- IPB17N25S3100ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | OptiMOS-T | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 107W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10mm | |
| Standards/Approvals | No | |
| Width | 9.25 mm | |
| Height | 4.4mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series OptiMOS-T | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 107W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10mm | ||
Standards/Approvals No | ||
Width 9.25 mm | ||
Height 4.4mm | ||
Automotive Standard AEC-Q101 | ||
不適用
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C Peak reflow
175°C operating temperature
Green product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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