製造零件編號

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 8-Pin ChipFET SI5935CDC-T1-GE3

RS庫存編號:: 818-1352
製造零件編號:: SI5935CDC-T1-GE3
製造商:: Vishay

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 8-Pin ChipFET SI5935CDC-T1-GE3

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RS庫存編號:: 818-1352
製造零件編號:: SI5935CDC-T1-GE3
製造商:: Vishay

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選取全部	屬性	值
	品牌	Vishay
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	3.8A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	ChipFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	156mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	150°C
	Typical Gate Charge Qg @ Vgs	7nC
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	3.1W
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Standards/Approvals	No
	Length	3.1mm
	Width	1.7 mm
	Height	1.1mm
	Number of Elements per Chip	2
	Automotive Standard	No

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	品牌 Vishay
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 3.8A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type ChipFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 156mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature 150°C
	Typical Gate Charge Qg @ Vgs 7nC
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 3.1W
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Standards/Approvals No
	Length 3.1mm
	Width 1.7 mm
	Height 1.1mm
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 8-Pin ChipFET SI5935CDC-T1-GE3

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