onsemi PowerTrench Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263 FDB050AN06A0
- RS庫存編號:
- 809-0809
- 製造零件編號:
- FDB050AN06A0
- 製造商:
- onsemi
可享批量折扣
小計（1 包，共 2 件）*
TWD188.00
(不含稅)
TWD197.40
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 612 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 198 | TWD94.00 | TWD188.00 |
| 200 - 398 | TWD92.50 | TWD185.00 |
| 400 + | TWD89.50 | TWD179.00 |
* 參考價格
- RS庫存編號:
- 809-0809
- 製造零件編號:
- FDB050AN06A0
- 製造商:
- onsemi
規格
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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