onsemi UniFET Type N-Channel MOSFET, 39 A, 200 V Enhancement, 3-Pin TO-220 FDPF39N20
- RS庫存編號:
- 806-3614
- 製造零件編號:
- FDPF39N20
- 製造商:
- onsemi
可享批量折扣
小計（1 包，共 5 件）*
TWD347.00
(不含稅)
TWD364.35
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 340 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD69.40 | TWD347.00 |
| 15 + | TWD67.60 | TWD338.00 |
* 參考價格
- RS庫存編號:
- 806-3614
- 製造零件編號:
- FDPF39N20
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 39A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | UniFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 66mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 37W | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Width | 4.9 mm | |
| Height | 16.07mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 39A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series UniFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 66mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 37W | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Width 4.9 mm | ||
Height 16.07mm | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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