onsemi UniFET Type N-Channel MOSFET, 61 A, 200 V Enhancement, 3-Pin TO-220 FDP61N20

可享批量折扣

小計(1 件)*

TWD48.00

(不含稅)

TWD50.40

(含稅)

Add to Basket
選擇或輸入數量
下方訂單 TWD1,300.00(不含稅)成本 TWD500.00。
有庫存
  • 加上 6 件從 2026年2月23日 起發貨
  • 加上 471 件從 2026年3月02日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 - 12TWD48.00
13 - 24TWD46.00
25 +TWD45.00

* 參考價格

包裝方式:
RS庫存編號:
671-4859
製造零件編號:
FDP61N20
製造商:
onsemi
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

UniFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

417W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.4V

Typical Gate Charge Qg @ Vgs

58nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

4.83 mm

Length

10.67mm

Standards/Approvals

No

Height

9.4mm

Automotive Standard

No

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

相關連結