onsemi UniFET Type N-Channel MOSFET, 61 A, 200 V Enhancement, 3-Pin TO-220 FDP61N20
- RS庫存編號:
- 671-4859
- 製造零件編號:
- FDP61N20
- 製造商:
- onsemi
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- RS庫存編號:
- 671-4859
- 製造零件編號:
- FDP61N20
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | UniFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 417W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.83 mm | |
| Height | 9.4mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series UniFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 417W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Operating Temperature 150°C | ||
Width 4.83 mm | ||
Height 9.4mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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