IXYS Type N-Channel MOSFET, 64 A, 500 V Enhancement, 3-Pin PLUS247 IXFX64N50Q3

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs

小計（1 件）*

TWD876.00

(不含稅)

TWD919.80

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 加上 26 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 +TWD876.00

* 參考價格

包裝方式：
RS庫存編號:
801-1503
Distrelec 貨號:
302-53-408
製造零件編號:
IXFX64N50Q3
製造商:
IXYS
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

500V

Package Type

PLUS247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

85mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

145nC

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

1kW

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Length

16.13mm

Standards/Approvals

No

Width

5.21 mm

Height

21.34mm

Automotive Standard

No

Distrelec Product Id

30253408

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

相關連結