規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Channel Type	N, P
	Maximum Continuous Drain Current	2.5 A, 3 A
	Maximum Drain Source Voltage	60 V
	Package Type	VEC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	8 mΩ, 137 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.6V
	Maximum Power Dissipation	900 mW
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	10 nC @ 10 V, 11 nC @ 10 V
	Number of Elements per Chip	2
	Length	2.9mm
	Transistor Material	Si
	Width	2.3mm
	Height	0.75mm

	選取全部
	品牌 onsemi
	Channel Type N, P
	Maximum Continuous Drain Current 2.5 A, 3 A
	Maximum Drain Source Voltage 60 V
	Package Type VEC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 8 mΩ, 137 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.6V
	Maximum Power Dissipation 900 mW
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 10 nC @ 10 V, 11 nC @ 10 V
	Number of Elements per Chip 2
	Length 2.9mm
	Transistor Material Si
	Width 2.3mm
	Height 0.75mm

Dual N/P-Channel MOSFET, ON Semiconductor

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

MOSFET Transistors, ON Semiconductor

onsemi Dual N/P-Channel MOSFET, 2.5 A, 3 A, 60 V, 8-Pin VEC VEC2616-TL-H

Dual N/P-Channel MOSFET, ON Semiconductor

相關連結