onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23 FDC6305N
- RS庫存編號:
- 761-3947
- 製造零件編號:
- FDC6305N
- 製造商:
- onsemi
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可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD156.00
(不含稅)
TWD163.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 10 件準備從其他地點送貨
- 加上 6,880 件從 2026年6月12日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD15.60 | TWD156.00 |
| 750 - 1490 | TWD15.30 | TWD153.00 |
| 1500 + | TWD15.10 | TWD151.00 |
* 參考價格
- RS庫存編號:
- 761-3947
- 製造零件編號:
- FDC6305N
- 製造商:
- onsemi
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 128mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 960mW | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.77V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 128mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 960mW | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.77V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The FDC6305N is an N-Channel MOSFET featuring a low threshold. Designed with PowerTrench® technology it boasts minimise on-state resistance and low-gate charge for superior switching performance.
Features and Benefits:
• Low gate charge
• Fast switching speed
• PowerTrench® technology
• Super small footprint. 72% smaller than a SO08.
The FDC6305N is typically used in these applications;
• Load switching
• DC/DC Converters
• Motor Driving
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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