onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23 FDC6305N

RS庫存編號:: 761-3947
製造零件編號:: FDC6305N
製造商:: onsemi

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23 FDC6305N

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小計（1 包，共 10 件）*

TWD156.00

(不含稅)

TWD163.80

訂單超過 $1,300.00 免費送貨

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7,430 件從 2026年1月12日起裝運發貨

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單位	每單位	每包*
10 - 740	TWD15.60	TWD156.00
750 - 1490	TWD15.30	TWD153.00
1500 +	TWD15.10	TWD151.00

* 參考價格

RS庫存編號:: 761-3947
製造零件編號:: FDC6305N
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.7A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	128mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.77V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	960mW
	Typical Gate Charge Qg @ Vgs	3.5nC
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Height	1mm
	Width	1.7 mm
	Length	3mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.7A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series PowerTrench
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 128mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.77V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 960mW
	Typical Gate Charge Qg @ Vgs 3.5nC
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Height 1mm
	Width 1.7 mm
	Length 3mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

The FDC6305N is an N-Channel MOSFET featuring a low threshold. Designed with PowerTrench® technology it boasts minimise on-state resistance and low-gate charge for superior switching performance.

Features and Benefits:

• Low gate charge

• Fast switching speed

• PowerTrench® technology

• Super small footprint. 72% smaller than a SO08.

The FDC6305N is typically used in these applications;

• Load switching

• DC/DC Converters

• Motor Driving

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23 FDC6305N

訂單超過 $1,300.00 免費送貨

Features and Benefits:

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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