onsemi PowerTrench Type N-Channel MOSFET, 75 A, 100 V Enhancement, 3-Pin TO-220 FDP090N10
- RS庫存編號:
- 759-9670
- 製造零件編號:
- FDP090N10
- 製造商:
- onsemi
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- RS庫存編號:
- 759-9670
- 製造零件編號:
- FDP090N10
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | PowerTrench | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 89nC | |
| Forward Voltage Vf | 1.25V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 16.51mm | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series PowerTrench | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 89nC | ||
Forward Voltage Vf 1.25V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 16.51mm | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.