Toshiba N-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC TPC8065-H,LQ(S
- RS庫存編號:
- 756-3804
- 製造零件編號:
- TPC8065-H,LQ(S
- 製造商:
- Toshiba
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 5 件)*
TWD98.00
(不含稅)
TWD102.90
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 125 個,準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 20 | TWD19.60 | TWD98.00 |
| 25 - 95 | TWD18.60 | TWD93.00 |
| 100 + | TWD18.00 | TWD90.00 |
* 參考價格
- RS庫存編號:
- 756-3804
- 製造零件編號:
- TPC8065-H,LQ(S
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 14.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Maximum Power Dissipation | 1.9 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 4.9mm | |
| Number of Elements per Chip | 1 | |
| Width | 3.9mm | |
| Height | 1.52mm | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 13 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 14.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Maximum Power Dissipation 1.9 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 4.9mm | ||
Number of Elements per Chip 1 | ||
Width 3.9mm | ||
Height 1.52mm | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TPCxxxx, Toshiba
MOSFET Transistors, Toshiba
相關連結
- Toshiba Type N-Channel MOSFET 30 V EnhancementLQ(S
- Toshiba Single U-MOSVIII-H 1 Type N-Channel MOSFET EnhancementLQ(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 30 V EnhancementLQ(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 80 V EnhancementLQ(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 60 V EnhancementLQ(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 30 V EnhancementLQ(S
- Toshiba U-MOSVIII-H Type N-Channel MOSFET 40 V EnhancementLQ(O
- Toshiba Isolated TPC 2 Type N-Channel MOSFET 40 V EnhancementLQ(S
