Infineon CoolMOS CP Type N-Channel MOSFET, 31 A, 650 V Enhancement, 3-Pin TO-247 IPW60R099CPFKSA1
- RS庫存編號:
- 753-3065
- 製造零件編號:
- IPW60R099CPFKSA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 件）*
TWD198.00
(不含稅)
TWD207.90
(含稅)
訂單超過 $1,300.00 免費送貨
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- 389 件從 2026年1月06日 起裝運發貨
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單位 | 每單位 |
|---|---|
| 1 - 7 | TWD198.00 |
| 8 - 14 | TWD193.00 |
| 15 + | TWD181.00 |
* 參考價格
- RS庫存編號:
- 753-3065
- 製造零件編號:
- IPW60R099CPFKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS CP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 255W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS CP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 255W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Length 16.13mm | ||
Width 5.21 mm | ||
Automotive Standard No | ||
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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