Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23 IRLML2060TRPBF
- RS庫存編號:
- 725-9357
- Distrelec 貨號:
- 304-45-313
- 製造零件編號:
- IRLML2060TRPBF
- 製造商:
- Infineon
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TWD192.00
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TWD201.60
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD9.60 | TWD192.00 |
| 760 - 1480 | TWD9.40 | TWD188.00 |
| 1500 + | TWD8.70 | TWD174.00 |
* 參考價格
- RS庫存編號:
- 725-9357
- Distrelec 貨號:
- 304-45-313
- 製造零件編號:
- IRLML2060TRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 480mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.67nC | |
| Maximum Power Dissipation Pd | 1.25W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 480mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.67nC | ||
Maximum Power Dissipation Pd 1.25W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 1.2A Maximum Continuous Drain Current - IRLML2060TRPBF
This MOSFET is a compact N-channel enhancement device intended for low-power switching in surface-mounted circuits. It offers moderate voltage handling and continuous current capacity for use in portable and space-constrained electronic assemblies, operating reliably across an extended temperature range.
Features and Benefits:
• Low Rds(on) of 480mΩ enables reduced conduction losses
• Maximum Vds 60V allows medium-voltage switching applications
• Continuous drain current 1.2A supports modest load currents
• Gate charge Qg 0.67nC enables faster gate-drive transitions
• Power dissipation rating 1.25W limits thermal rise under load
• Gate-source withstand 16V gives margin for drive variation
• Maximum Vds 60V allows medium-voltage switching applications
• Continuous drain current 1.2A supports modest load currents
• Gate charge Qg 0.67nC enables faster gate-drive transitions
• Power dissipation rating 1.25W limits thermal rise under load
• Gate-source withstand 16V gives margin for drive variation
Applications
• Suitable for DC switch control in battery-powered devices
• Ideal for small motor-driver circuits and load switching
• Used with logic-level drivers for efficient power conversion
• Can be used for signal-level power distribution on PCBs
• Suitable for compact power-management modules in instrumentation
• Ideal for small motor-driver circuits and load switching
• Used with logic-level drivers for efficient power conversion
• Can be used for signal-level power distribution on PCBs
• Suitable for compact power-management modules in instrumentation
What temperature conditions can it withstand during operation?
It is specified to function down to -55°C and up to 150°C for use in environments with wide thermal variation.
How does the package affect board layout and assembly?
The SOT-23 surface-mount package minimises board footprint and eases automated placement for high-density assemblies.
What electrical stress limits should designers consider for gate drive?
The maximum gate-source voltage is 16V, so gate drivers should remain within this value to avoid over-stressing the gate.
How does its switching behaviour impact thermal management?
With a typical gate charge of 0.67nC and 1.25W power dissipation, duty cycle and switching frequency must be managed to prevent excessive junction heating.
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