製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 280 A, 40 V Enhancement, 3-Pin TO-220 IRF2804PBF

RS庫存編號:: 716-5558
製造零件編號:: IRF2804PBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 280 A, 40 V Enhancement, 3-Pin TO-220 IRF2804PBF

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可享批量折扣

小計（1 包，共 2 件）*

TWD144.00

(不含稅)

TWD151.20

訂單超過 $1,300.00 免費送貨

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738 件準備從其他地點送貨
加上 884 件從 2026年1月30日起發貨

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單位	每單位	每包*
2 - 12	TWD72.00	TWD144.00
14 - 24	TWD63.50	TWD127.00
26 +	TWD59.00	TWD118.00

* 參考價格

RS庫存編號:: 716-5558
製造零件編號:: IRF2804PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	280A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	160nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	330W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Width	4.83 mm
	Standards/Approvals	No
	Height	9.02mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 280A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 160nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 330W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Width 4.83 mm
	Standards/Approvals No
	Height 9.02mm
	Automotive Standard No

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