Infineon HEXFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 3-Pin TO-220

RS庫存編號:: 541-2470
Distrelec 貨號:: 303-41-337
製造零件編號:: IRFI540NPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 3-Pin TO-220

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RS庫存編號:: 541-2470
Distrelec 貨號:: 303-41-337
製造零件編號:: IRFI540NPBF
製造商:: Infineon

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	52mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	54W
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	94nC
	Maximum Operating Temperature	175°C
	Length	10.63mm
	Height	8.9mm
	Standards/Approvals	No
	Width	4.83 mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 52mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 54W
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 94nC
	Maximum Operating Temperature 175°C
	Length 10.63mm
	Height 8.9mm
	Standards/Approvals No
	Width 4.83 mm
	Automotive Standard AEC-Q101

Infineon HEXFET Series MOSFET, 20A Maximum Continuous Drain Current, 54W Maximum Power Dissipation - IRFI540NPBF

This MOSFET is developed for high-performance applications in the electronics industry, playing a crucial role in power management and providing a dependable solution for switching and amplifying electronic signals. It can manage significant voltage and current loads, ensuring efficiency in modern electronic devices.

Features & Benefits

• Continuous drain current rating up to 20A

• Voltage rating of 100V for durable performance

• Low gate threshold voltage enhances switching efficiency

• High power dissipation capability of up to 54W for durability

• N-channel enhancement mode design for a variety of applications

• Low drain-source resistance of 52 mΩ minimises energy loss

Applications

• Used in power supplies for electronic circuits

• Applicable in automotive power management systems

• Utilised in motor control systems for increased efficiency

• Important for power conversion in renewable energy systems

• Employed in automated machinery for effective control processes

What is the maximum continuous current rating for this device?

The device supports a maximum continuous drain current of 20A, accommodating various applications.

How does the gate threshold voltage affect performance?

The gate threshold voltage ranges from 2V to 4V, facilitating efficient switching at lower control voltages and enhancing performance.

Can this device operate in high-temperature environments?

Yes, it can function at temperatures reaching +175°C, ensuring performance in challenging conditions.

Is there a specific mounting type recommended for optimal performance?

It is suited for through-hole mounting, allowing secure connections and effective thermal management in different applications.

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.