Vishay IRF510 Type N-Channel Power MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-220AB IRF510PBF
- RS庫存編號:
- 708-5134
- Distrelec 貨號:
- 304-44-152
- 製造零件編號:
- IRF510PBF
- 製造商:
- Vishay
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TWD255.00
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TWD267.80
(含稅)
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- 1,260 件準備從其他地點送貨
- 加上 3,130 件從 2026年7月03日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD25.50 | TWD255.00 |
| 20 - 20 | TWD23.30 | TWD233.00 |
| 30 + | TWD22.90 | TWD229.00 |
* 參考價格
- RS庫存編號:
- 708-5134
- Distrelec 貨號:
- 304-44-152
- 製造零件編號:
- IRF510PBF
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220AB | |
| Series | IRF510 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 540mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 2.5V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220AB | ||
Series IRF510 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 540mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 2.5V | ||
Maximum Operating Temperature 175°C | ||
Length 10.41mm | ||
Height 9.01mm | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRF510 Series Power MOSFET, 100V Maximum Drain Source Voltage, 5.6A Maximum Continuous Drain Current - IRF510PBF
This power MOSFET is a through‑hole N‑channel enhancement device designed for switching and amplification tasks in industrial and electronic systems. It operates across a wide temperature range and is intended for applications requiring moderate current handling and high voltage blocking capability in a TO‑220AB package.
Features and Benefits:
• 100V drain‑source rating for high‑voltage switching capability • 5.6A continuous drain current for moderate load handling • 540mΩ Rds(on) to limit conduction losses under load • 43W power dissipation to support thermal headroom in assemblies • 20V gate‑source limit allowing flexible drive voltages • 8.3nC typical gate charge enabling predictable switching profiles
Applications
• Suitable for motor driver stages in automation equipment • Ideal for power switching in laboratory power supplies • Used for load switching in test and measurement rigs • Can be used for analogue amplifier outputs in control systems
What operating temperatures can it tolerate in harsh environments?
It functions from -55°C up to 175°C, allowing use in demanding temperature conditions.
How is the device mounted for mechanical and thermal stability?
It uses a through‑hole mount in a TO‑220AB package, permitting secure PCB fastening and straightforward heatsinking.
What gate drive considerations affect switching performance?
The typical gate charge of 8.3nC at rated Vgs influences driver current requirements and switching speed trade‑offs.
What should be considered when pairing with a heatsink?
With 43W maximum dissipation, heatsink thermal resistance and airflow must be sized to keep junction temperature within limits.
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