Vishay IRF510 Type N-Channel Power MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-220AB IRF510PBF
- RS庫存編號:
- 708-5134
- Distrelec 貨號:
- 304-44-152
- 製造零件編號:
- IRF510PBF
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD338.00
(不含稅)
TWD354.90
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,220 件從 2026年8月10日 起發貨
- 加上 3,030 件從 2026年8月17日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD33.80 | TWD338.00 |
| 20 - 20 | TWD30.90 | TWD309.00 |
| 30 + | TWD30.40 | TWD304.00 |
* 參考價格
- RS庫存編號:
- 708-5134
- Distrelec 貨號:
- 304-44-152
- 製造零件編號:
- IRF510PBF
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRF510 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 540mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Forward Voltage Vf | 2.5V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.41mm | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRF510 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 540mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Forward Voltage Vf 2.5V | ||
Maximum Operating Temperature 175°C | ||
Length 10.41mm | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRF510 Series Power MOSFET, 100V Maximum Drain Source Voltage, 43W Maximum Power Dissipation - IRF510PBF
This power MOSFET is a single N-channel enhancement device designed for switching and amplification tasks in through‑hole assemblies. It operates across a wide temperature span suitable for demanding environments and accepts standard gate‑drive levels to control medium‑power loads. The component is supplied in a TO‑220AB package for straightforward mounting and thermal interfacing on heatsinks.
Features and Benefits:
• 100V drain voltage supports high‑voltage switching applications
• 5.6A continuous drain current handles moderate load currents
• 540mΩ Rds(on) reduces conduction losses for efficient switching
• 43W power dissipation enables sustained power handling with cooling
• 8.3nC typical gate charge allows reasonably fast switching response
• ±20V gate tolerance accommodates common gate‑drive ranges
• 5.6A continuous drain current handles moderate load currents
• 540mΩ Rds(on) reduces conduction losses for efficient switching
• 43W power dissipation enables sustained power handling with cooling
• 8.3nC typical gate charge allows reasonably fast switching response
• ±20V gate tolerance accommodates common gate‑drive ranges
Applications
• Suitable for amplifier circuit output stages in audio designs
• Ideal for general‑purpose switching in power supplies
• Used with heatsinks for motor control and power conversion
• Can be used for educational and prototyping through‑hole projects
• Useful as a transistor replacement part in repair work
• Ideal for general‑purpose switching in power supplies
• Used with heatsinks for motor control and power conversion
• Can be used for educational and prototyping through‑hole projects
• Useful as a transistor replacement part in repair work
What ambient temperatures can the device withstand in operation?
It is specified to function from -55°C up to 175°C junction temperature for use in high‑temperature assemblies.
How many pins does the component present for PCB mounting?
The device is provided with three pins configured for through‑hole mounting in a TO‑220AB footprint.
What package form factor should I prepare a heatsink for?
The TO‑220AB enclosure offers a flat rear tab suitable for bolting to a heatsink to improve thermal dissipation.
Is the component suitable for automotive‑standard requirements?
The device is not specified to meet automotive approval standards and should not be assumed compliant for regulated vehicle use.
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