STMicroelectronics STripFET II Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-220 STP80NF10FP
- RS庫存編號:
- 687-5311
- 製造零件編號:
- STP80NF10FP
- 製造商:
- STMicroelectronics
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小計（1 包，共 2 件）*
TWD193.00
(不含稅)
TWD202.64
(含稅)
訂單超過 $1,300.00 免費送貨
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- 600 件從 2026年1月27日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 12 | TWD96.50 | TWD193.00 |
| 14 - 24 | TWD94.50 | TWD189.00 |
| 26 + | TWD93.00 | TWD186.00 |
* 參考價格
- RS庫存編號:
- 687-5311
- 製造零件編號:
- STP80NF10FP
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | STripFET II | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 135nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.4mm | |
| Height | 9.3mm | |
| Width | 4.6 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series STripFET II | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 135nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 10.4mm | ||
Height 9.3mm | ||
Width 4.6 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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