STMicroelectronics STripFET II Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-220 STP140NF75
- RS庫存編號:
- 687-5302
- 製造零件編號:
- STP140NF75
- 製造商:
- STMicroelectronics
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TWD146.00
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TWD153.30
(含稅)
訂單超過 $1,300.00 免費送貨
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- 7,238 件從 2026年1月14日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 12 | TWD73.00 | TWD146.00 |
| 14 - 24 | TWD72.00 | TWD144.00 |
| 26 + | TWD69.50 | TWD139.00 |
* 參考價格
- RS庫存編號:
- 687-5302
- 製造零件編號:
- STP140NF75
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | STripFET II | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 310W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.15mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series STripFET II | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 310W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Operating Temperature 175°C | ||
Height 9.15mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Automotive Standard No | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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