onsemi QFET N-Channel MOSFET, 10 A, 60 V, 3-Pin TO-220F FQPF13N06L

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RS庫存編號:
671-5225
製造零件編號:
FQPF13N06L
製造商:
onsemi
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品牌

onsemi

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

60 V

Series

QFET

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

4.8 nC @ 5 V

Length

10.16mm

Number of Elements per Chip

1

Width

4.7mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

9.19mm

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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