onsemi QFET Type N-Channel MOSFET, 5.5 A, 800 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 671-5161
- 製造零件編號:
- FQP6N80C
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD455.00
(不含稅)
TWD477.75
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 630 件從 2025年12月29日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD91.00 | TWD455.00 |
| 15 - 20 | TWD89.60 | TWD448.00 |
| 25 + | TWD88.00 | TWD440.00 |
* 參考價格
- RS庫存編號:
- 671-5161
- 製造零件編號:
- FQP6N80C
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | QFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 158W | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7 mm | |
| Height | 9.4mm | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series QFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 158W | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.7 mm | ||
Height 9.4mm | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
相關連結
- onsemi QFET Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 FQP6N80C
- onsemi QFET Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- onsemi QFET Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- onsemi QFET Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- onsemi QFET Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 FQPF2N80
- onsemi QFET Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 FQPF3N80C
- onsemi QFET Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 FQP8N80C
- onsemi QFET Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220F FQPF8N80C