onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET, 8.6 A, 30 V Enhancement, 8-Pin SOIC FDS8858CZ
- RS庫存編號:
- 671-0719
- 製造零件編號:
- FDS8858CZ
- 製造商:
- onsemi
可享批量折扣
小計（1 包，共 5 件）*
TWD140.00
(不含稅)
TWD147.00
(含稅)
添加 50 件 件可免費送貨
供應短缺
- 加上 50 件從 2026年2月23日 起發貨
- 加上 4,290 件從 2026年3月02日 起發貨
我們目前的可售庫存有限，並且我們的供應商預計會出現供應短缺的狀況。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | TWD28.00 | TWD140.00 |
| 625 - 1245 | TWD27.40 | TWD137.00 |
| 1250 + | TWD27.20 | TWD136.00 |
* 參考價格
- RS庫存編號:
- 671-0719
- 製造零件編號:
- FDS8858CZ
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Width 4 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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