Toshiba 2SK Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SC-59 2SK1062(F)
- RS庫存編號:
- 601-1961
- 製造零件編號:
- 2SK1062(F)
- 製造商:
- Toshiba
可享批量折扣
小計(1 包,共 10 件)*
TWD273.00
(不含稅)
TWD286.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 60 件準備從其他地點送貨
- 加上 2,770 件從 2026年1月26日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD27.30 | TWD273.00 |
| 20 - 40 | TWD26.60 | TWD266.00 |
| 50 - 90 | TWD26.00 | TWD260.00 |
| 100 - 190 | TWD25.20 | TWD252.00 |
| 200 + | TWD24.60 | TWD246.00 |
* 參考價格
- RS庫存編號:
- 601-1961
- 製造零件編號:
- 2SK1062(F)
- 製造商:
- Toshiba
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-59 | |
| Series | 2SK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Width | 1.5 mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-59 | ||
Series 2SK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Width 1.5 mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
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